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| Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA1625 FEATURES Power dissipation PCM : 750 mW (Tamb=25) 2. COLLECTOR TRANSISTOR (PNP) TO-92 1. EMITTER Collector current : -0.5 A ICM Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on Time Storage Time Fall-Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100A, IE=0 Ic=-1mA, IB=0 IE=-100A, IC=0 VCB=-400V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-50mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-10V, IC=-10mA VCB=-10V, IE=0, f=1MHz -400 -400 -7 -1 -1 40 200 -1 -1.2 10 20 A A V V MHz pF s s s fT Cob ton tstg tf 40 1 VCC=-150V, Ic=-100mA, IB!=IB2-10mA, RL=1.5K 5 1 CLASSIFICATION OF hFE(1) Rank Range M 40-80 L 60-120 K 100-200 |
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